Enhanced excitonic emission efficiency in porous GaN and GaInN-GaN quantum wells grown along the polar direction

Acte de colloque

Thi Huong Ngo, Bernard Gil, Tatiana V. Shubina, Pierre Valvin, Benjamin Damilano, Stephane Vezian, Jean Massies et IEEE

2019 COMPOUND SEMICONDUCTOR WEEK (CSW)

01/01/2019

Résumé

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Science & Technology

Technology

1 Consultations de la notice

Titre: Enhanced excitonic emission efficiency in porous GaN and GaInN-GaN quantum wells grown along the polar direction
Créateurs - sans rôle: Thi Huong Ngo - CNRS, Ctr Rech Heteroepitaxie & Applicat, Rue Bernard Gregory, F-06560 Valbonne, France
Bernard Gil - CNRS, Lab Charles Coulomb, CC074, F-34095 Montpellier 5, France
Tatiana V. Shubina - Ioffe Institute
Pierre Valvin - CNRS, Lab Charles Coulomb, CC074, F-34095 Montpellier 5, France
Benjamin Damilano - CNRS, Ctr Rech Heteroepitaxie & Applicat, Rue Bernard Gregory, F-06560 Valbonne, France
Stephane Vezian - CNRS, Ctr Rech Heteroepitaxie & Applicat, Rue Bernard Gregory, F-06560 Valbonne, France
Jean Massies - CNRS, Ctr Rech Heteroepitaxie & Applicat, Rue Bernard Gregory, F-06560 Valbonne, France
IEEE
Détails de publication: 2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
Éditeur: IEEE
Nombre de pages: 2
Note de subvention: 14.W03.31.0011 / Government of the Russian Federation ANR-11-LABX-0014 / French ANR agency: GANEX; French National Research Agency (ANR) ANR-18-CE24-0022 / French ANR agency: NAPOLI; French National Research Agency (ANR)
Identifiants: 99147409209311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding