Résumé
Stacking 2D materials into van der Waals heterostructures implies the emergence of interlayer interactions, modifying electronic scattering in a given layer. We develop an efficient ab initio approach to compute the electrodynamic response of 2D heterostructures, including long range Coulomb interactions between electrons, polar phonons, and plasmons. We extract electron scattering from this model and solve a system of coupled Boltzmann transport equations for electrons and electrodynamic modes. This accounts for non-trivial momentum exchanges such as the so-called phonon drag. We study the effects of remote electron-plasmon-phonon couplings on the electronic transport properties of 2D materials. We also show that a dynamical treatment of electronic screening has a significant impact on the mobility of doped semiconductors with a Fermi level around the band edge. Indeed, polar phonons dynamically coupled with electron-hole excitations scatter momentum differently than the standard polar phonons, whether bare or statically screened.