Résumé
Binary InAs/GaSb superlattices (SLs) grown on GaSb substrates form an ideal material system for the fabrication of short-period SLs with broken-gap type-II band alignment. They can achieve effective energy gaps that are narrower than that of InAs itself, down to zero. Such narrow gaps are of great interest for the mid- (3-5µm) and long-wavelength infrared region (8-12µm) applications, as detectors [1-3], as well as emitters [4-5]. In this communication we report on some electrical and optical characterizations of InAs(N MLs) / InSb(1 ML) / GaSb(N MLs) superlattices suitable for mid-infrared applications.