- Titre
- Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation
- Créateurs - sans rôle
- P. Sai - Institute of High Pressure PhysicsD. But - Institute of High Pressure PhysicsM. Dub - Institute of High Pressure PhysicsM. Sakowicz - Institute of High Pressure PhysicsB. Grzywacz - Institute of High Pressure PhysicsP. Prystawko - Institute of High Pressure PhysicsG. Cywinski - Institute of High Pressure PhysicsW. Knap - Institute of High Pressure PhysicsS. Rumyantsev - Institute of High Pressure Physics
- Détails de publication
- ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), pp.90-93
- Colloque
- ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) (Cracow, France, 23/09/2019–26/09/2019)
- Identifiants
- 9940555109311
- Unité académique
- Laboratoire Charles Coulomb - L2C
- Langue
- English
- Type de ressource
- Conference proceeding
- Champs locaux
- hal-04840400
Acte de colloque
Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), pp.90-93
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) (Cracow, France, 23/09/2019–26/09/2019)
2019
Indicateurs
1 Consultations de la notice