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Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories
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Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories

Olivier Ginez, Jean-Michel Daga, Patrick Girard, Christian Landrault, Serge Pravossoudovitch et Arnaud Virazel
12th IEEE European Test Symposium, pp.77-82
ETS: European Test Symposium (Freiburg, Germany, 20/05/2007–24/05/2007)
2007

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