Résumé
Total-ionizing-dose response of two BiCMOS technologies Si/SiGe:C HBTs, the 130 nm BiCMOS9MW and the 55 nm B55, was compared during X-ray and Gamma irradiation. TID degradation effect on the DC characteristics is analyzed showing the main role of the Emitter-Base oxide region, this is supported by TCAD simulations. Impact of short and long-time intervals between measurements was undertaken demonstrating that the degradation of the base current is stable in time. Each irradiation technique was followed by a thermal annealing process. A higher healing impact for the induced damages was more pronounced after the Gamma-ray exposure. In both irradiation cases, an enhanced healing behavior was recorded by the B55 technology. Promising results are found for BiCMOS Si/SiGe HBTs technology in extreme environments especially for the B55 BiCMOS technology.