Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics

J. El Beyrouthy; B. Sagnes; F. Pascal; A. Hoffmann; A. Adebabay Belie; J. Boch; T. Maraine; S. Haendler; P. Chevalier; D. Gloria; M. Bouhouche; IEEE

doi:10.1109/RADECS59069.2023.10766992

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Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics

J. El Beyrouthy, B. Sagnes, F. Pascal, A. Hoffmann, A. Adebabay Belie, J. Boch, T. Maraine, S. Haendler, P. Chevalier, D. Gloria, …

2023 23rd European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp.1-4

25/09/2023

DOI: https://doi.org/10.1109/RADECS59069.2023.10766992

Résumé

Annealing

BiCMOS integrated circuits

Cobalt

cobalt 60 irradiation

Degradation

Geometry

Gummel plot

HBTs

Heterojunction bipolar transistors

Integrated circuits

Radiation effects

Si/SiGe

Silicon germanium

Stress

Total Ionizing Dose (TID)

X-ray irradiation

The impact of X-ray and cobalt 60 irradiations on the DC characteristics of two advanced BiCMOS technologies, Si/SiGe:C HBTs, is compared and analyzed. The effects of geometry, post-irradiation time, and annealing are investigated.

Indicateurs

1 Consultations de la notice

Détails

Titre: Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics
Créateurs - sans rôle: J. El Beyrouthy - IES, University of Montpellier, CNRS,Montpellier,France,34095
B. Sagnes - IES, University of Montpellier, CNRS,Montpellier,France,34095
F. Pascal - IES, University of Montpellier, CNRS,Montpellier,France,34095
A. Hoffmann - IES, University of Montpellier, CNRS,Montpellier,France,34095
A. Adebabay Belie - IES, University of Montpellier, CNRS,Montpellier,France,34095
J. Boch - IES, University of Montpellier, CNRS,Montpellier,France,34095
T. Maraine - IES, University of Montpellier, CNRS,Montpellier,France,34095
S. Haendler - STMicroelectronics,Crolles,France,38926
P. Chevalier - STMicroelectronics,Crolles,France,38926
D. Gloria - STMicroelectronics,Crolles,France,38926
M. Bouhouche - LHS, University of Constantine 1,Constantine,Algeria
IEEE
Détails de publication: 2023 23rd European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp.1-4
Éditeur: IEEE
Nombre de pages: 4
Identifiants: 99162735809311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding