Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Lucas Matana Luza; Alexandre Bosser; Viyas Gupta; Arto Javanainen; Ali Mohammadzadeh; Luigi Dilillo

doi:10.1109/DFT.2019.8875475

Retour

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Acte de colloque

Open Access

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Lucas Matana Luza, Alexandre Bosser, Viyas Gupta, Arto Javanainen, Ali Mohammadzadeh et Luigi Dilillo

DFT 2019 - 32th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, pp.1-6

DFT 2019 - 32th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (Noordwijk, Netherlands, 02/10/2019–04/10/2019)

21/10/2019

DOI: https://doi.org/10.1109/DFT.2019.8875475

Résumé

NAND circuits

Logic gates

Flash memories

Ions

Microprocessors

Computer architecture

Radiation effects

Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

Fichiers et liens (1)

url

Find in HALAfficher

Indicateurs

1 Consultations de la notice

Détails

Titre: Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory
Créateurs - sans rôle: Lucas Matana Luza - Test and dEpendability of microelectronic integrated SysTems
Alexandre Bosser - Aalto University
Viyas Gupta - Agence Spatiale Européenne = European Space Agency
Arto Javanainen - Vanderbilt University
Ali Mohammadzadeh - European Space Research and Technology Centre
Luigi Dilillo - Université de Picardie Jules Verne
Détails de publication: DFT 2019 - 32th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, pp.1-6
Colloque: DFT 2019 - 32th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (Noordwijk, Netherlands, 02/10/2019–04/10/2019)
Identifiants: 9943129209311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-03025660