Résumé
Research and industry interest on terrestrial radiation effects of electronic devices has been expanded over the last years from avionics and military applications to commercial applications as well. At the same time, the need for faster and more reliable memories has given growth to new memory technologies such as Magnetic (magneto-resistive) Random Access Memories (MRAM), a promising new non-volatile memory technology that will probably replace in the future the current SRAM and FLASH based memories. In this paper, we evaluate the soft error resilience of a commercial toggle MRAM in dynamic test mode besides the standard static mode test, under neutron radiation with energies of 25, 50 and 80 MeV. under different operating modes (static, dynamic), supply voltage and process corner.