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Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm
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Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm

Fabiola A. Camargo, Jessica Barrientos-Barria, Ghaya Baili, Loïc Morvan, Daniel Dolfi, Isabelle Sagnes, Arnaud Garnache, Fabien Bretenaker, Patrick Georges et Gaëlle Lucas-Leclin
LASE '12 / Vertical External Cavity Surface Emitting Semiconductor Lasers (xx, United States, 2012)

Résumé

We demonstrate the dual-­‐frequency emission of a diode-­‐pumped vertical external-­‐cavity semiconductor laser operating at 852 nm, dedicated to the coherent population trapping of cesium atoms. It is based on a single laser cavity sustaining the oscillation of two adjacent, orthogonally-­polarized, modes. Two coherent laser lines distant from a few GHz are obtained in a simple and compact configuration. Up to 20 mW has been achieved at each frequency.

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