- Titre
- Drift and diffusion high-field magneto-transport in GaN
- Créateurs - sans rôle
- G. Syngayivska - National Academy of Sciences of UkraineV. Korotyeyev - V.E. Lashkaryov Institute of Semiconductor PhysicsV. Kochelap - V.E. Lashkaryov Institute of Semiconductor PhysicsL. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
- Colloque
- The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Buffalo, United States, 2017)
- Identifiants
- 9944920009311
- Unité académique
- Institut d'Electronique et des Systèmes - IES
- Langue
- English
- Type de ressource
- Conference proceeding
- Champs locaux
- hal-02055361
Acte de colloque
Drift and diffusion high-field magneto-transport in GaN
The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Buffalo, United States, 2017)
22/10/2017
Indicateurs
1 Consultations de la notice