Dose Effects on Bipolar Transistors Belonging to a CMOS SOI Process

Alain Michez; Jerome Boch; Frederic Saigne; Severine Furic; Eric Leduc; IEEE

doi:10.1109/RADECS55911.2022.10412607

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Dose Effects on Bipolar Transistors Belonging to a CMOS SOI Process

Alain Michez, Jerome Boch, Frederic Saigne, Severine Furic, Eric Leduc et IEEE

2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS, pp.69-72

Radiation and its Effects on Components and Systems

01/01/2022

DOI: https://doi.org/10.1109/RADECS55911.2022.10412607

Résumé

Engineering

Engineering, Electrical & Electronic

Nuclear Science & Technology

Science & Technology

Technology

The Total Ionizing Dose response of bipolar transistors, manufactured with a CMOS SOI process is presented. Both base and collector currents increase with TID. TCAD simulation is used to explain the observed experimental results.

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1 Consultations de la notice

Détails

Titre: Dose Effects on Bipolar Transistors Belonging to a CMOS SOI Process
Créateurs - sans rôle: Alain Michez - Univ Montpellier, IES UMR UM CNRS 5214, 860 Rue St Priest, Montpellier, France
Jerome Boch - Univ Montpellier, IES UMR UM CNRS 5214, 860 Rue St Priest, Montpellier, France
Frederic Saigne - Univ Montpellier, IES UMR UM CNRS 5214, 860 Rue St Priest, Montpellier, France
Severine Furic - MICROCHIP, Nantes, France
Eric Leduc - MICROCHIP, Nantes, France
IEEE
Détails de publication: 2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS, pp.69-72
Publications en série: Radiation and its Effects on Components and Systems
Éditeur: IEEE
Nombre de pages: 4
Identifiants: 99139381609311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding