Résumé
The Aggressive technology scaling makes modern advanced SRAMs more and more sensitive to soft errors that include single-node upsets (SNUs) and double-node upsets (DNUs). This paper presents a novel Sextuple Cross-Coupled SRAM cell, namely SCCS cell, which can tolerate both SNUs and DNUs. The cell mainly consists of six cross-coupled input-split inverters, constructing a large error-interceptive feedback loop to robustly retain stored values. Since the cell has many redundant storage nodes, the cell achieves the following robustness: (1) the cell can self-recover from all possible SNU; (2) the cell can self-recover from partial DNUs; (3) the cell can avoid the occurrence of other DNUs due to node-separation. Simulation results validate the excellent robustness of the proposed cell. Moreover, compared with the state-of-the-art typical existing hardened cells, the proposed cell achieves an approximate 61% read access time as well as 12% write access time reduction at the costs of 47% power dissipation as well as 44% silicon area on average.