Résumé
Degradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94% of their original photocurrent after an 1015cm-2 electron-irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation