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Defect Analysis in Power Mode Control Logic of Low-Power SRAMs
Acte de colloque

Defect Analysis in Power Mode Control Logic of Low-Power SRAMs

Leonardo B. Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, Arnaud Virazel et Nabil Badereddine
17th European Test Symposium
ETS: European Test Symposium (Annecy, France, 28/05/2012–01/06/2012)
2012

Résumé

low-power design memory test power mode control logic power switch failure analysis SRAM
Summary form only given. Low-power SRAMs embed power gating mechanisms for reducing static power consumption. Power gating is applied in SRAMs using power switches for controlling the supply voltage applied to the various memory blocks (array, decoders, I/O logic, etc.). This paper provides a detailed analysis based on electrical simulations to describe the impacts of resistive-open defects on the power mode control logic, which generates control signals of power switches.

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