Cross-section doping topography of 4H-SiC VJFETs by various techniques

K. Tsagaraki; Maher Nafouti; H. Peyre; K Vamvoukakis; N Makris; M Kayambaki; A Stavrinidis; G Konstantinidis; M Panagopoulou; D. Alquier; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.924.653

Cross-section doping topography of 4H-SiC VJFETs by various techniques

Acte de colloque

Open Access

Cross-section doping topography of 4H-SiC VJFETs by various techniques

K. Tsagaraki, Maher Nafouti, H. Peyre, K Vamvoukakis, N Makris, M Kayambaki, A Stavrinidis, G Konstantinidis, M Panagopoulou, D. Alquier, …

International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, DC, United States, 17/09/2017–22/09/2017)

DOI: https://doi.org/10.4028/www.scientific.net/MSF.924.653

Résumé

TSI-VJFET

SIMS

SSRM

SEM

Silicon Carbide

SCM

Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.

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Titre: Cross-section doping topography of 4H-SiC VJFETs by various techniques
Créateurs - sans rôle: K. Tsagaraki - Institute for Electronic Structure and Laser
Maher Nafouti - Université de Tours
H. Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
K Vamvoukakis - Institute for Electronic Structure and Laser
N Makris - Institute for Electronic Structure and Laser
M Kayambaki - Institute for Electronic Structure and Laser
A Stavrinidis - Institute for Electronic Structure and Laser
G Konstantinidis - Institute for Electronic Structure and Laser
M Panagopoulou - National Technical University of Athens
D. Alquier - Université de Tours
Konstantinos Zekentes
Colloque: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, DC, United States, 17/09/2017–22/09/2017)
Identifiants: 9945915709311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01698971