Creation of Quantum Centers in Silicon using Spatial Selective Ion Implantation of high Lateral Resolution

Tobias Herzig; Paul Raecke; Nicole Raatz; Daniel Spemann; Walid Redjem; Juergen W. Gerlach; Jan Meijer; Guillaume Cassabois; Marco Abbarchi; Sebastien Pezzagna

Acte de colloque

Creation of Quantum Centers in Silicon using Spatial Selective Ion Implantation of high Lateral Resolution

Tobias Herzig, Paul Raecke, Nicole Raatz, Daniel Spemann, Walid Redjem, Juergen W. Gerlach, Jan Meijer, Guillaume Cassabois, Marco Abbarchi et Sebastien Pezzagna

2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), pp.136-139

01/01/2018

Résumé

Computer Science

Computer Science, Hardware & Architecture

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

We report on our latest progress in spatial selective, high-resolution ion implantation for applications in quantum computing, sensor technology and photonics. On the basis of a well-known light-emitting defect in silicon, called G-center, we explain how our setups help to fabricate and investigate such optical centers for future generation techniques.

Indicateurs

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Détails

Titre: Creation of Quantum Centers in Silicon using Spatial Selective Ion Implantation of high Lateral Resolution
Créateurs - sans rôle: Tobias Herzig - Univ Leipzig, Felix Bloch Inst Solid State Phys, Leipzig, Germany
Paul Raecke - Univ Leipzig, Felix Bloch Inst Solid State Phys, Leipzig, Germany
Nicole Raatz - Univ Leipzig, Felix Bloch Inst Solid State Phys, Leipzig, Germany
Daniel Spemann - Leibniz Joint Lab Single Ion Implantat, Leipzig, Germany
Walid Redjem - Laboratoire Charles Coulomb
Juergen W. Gerlach - Leibniz Joint Lab Single Ion Implantat, Leipzig, Germany
Jan Meijer - Univ Leipzig, Felix Bloch Inst Solid State Phys, Leipzig, Germany
Guillaume Cassabois - Univ Montpellier, Lab Charles Coulomb L2C, Montpellier, France
Marco Abbarchi - Aix Marseille Univ, IM2NP, Marseille, France
Sebastien Pezzagna - Univ Leipzig, Felix Bloch Inst Solid State Phys, Leipzig, Germany
Contributeurs - sans rôle: Haublein
H Ryssel
Détails de publication: 2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), pp.136-139
Éditeur: IEEE
Nombre de pages: 4
Note de subvention: ANR-15-CE24-0027; 100308873 / Sachsisches Ministerium fur Wissenschaft und Kunst DFG; German Research Foundation (DFG) ANR; Agence Nationale de la Recherche (ANR) ANR-15-CE24-0027; SAW-2015-IOM-1 / Leibniz Association
Identifiants: 99147442409311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding