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Contribution of molecular simulation to the characterization of porous low-k materials
Acte de colloque

Contribution of molecular simulation to the characterization of porous low-k materials

Lucile Broussous, Matthieu J. Lépinay, Benoit Coasne, Christophe Licitra, V. Rouessac, François Bertin et André Ayral
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), pp.123-126
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) (Grenoble, France, 18/05/2015–21/05/2015)
2015
DOI: https://doi.org/10.1109/IITC-MAM.2015.7325636

Résumé

ellipsometry molecular dynamics method plasma materials processing porosity porous materials sputter etching statistical mechanics surface cleaning surface composition thin films SiOCH chemical surface compositions ellipso-porosimetry low-k porous thin films numerical simulations plasma etching solvent adsorption solvent affinity statistical mechanics molecular simulations surface porosity wet cleaning Adsorption Chemicals Methanol Probes Silicon compounds Solvents Surface treatment
This study aims to investigate the modified surface porosity of SiOCH low-k porous thin films using statistical mechanics molecular simulations and ellipso-porosimetry. The thin films are modified by plasma etching and wet cleaning. Numerical simulations of solvent adsorption on surfaces highlighted solvent affinity variations depending on chemical surface compositions.

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