Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors

Acte de colloque

Wojciech Knap et J. Lusakowski

2009 E-MRS Fall Meeting (Warsaw, Poland, 07/09/2009)

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Titre: Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors
Créateurs - sans rôle: Wojciech Knap - Groupe d'étude des semiconducteurs
J. Lusakowski - Institute of Experimental Physics of the Slovak Academy of Sciences
Colloque: 2009 E-MRS Fall Meeting (Warsaw, Poland, 07/09/2009)
Identifiants: 9939093009311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00812129