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Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations
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Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations

Christophe Entringer, P. Flatrese, Pascal Salomé, Pascal Nouet et Florence Azaïs
EUROSOI'05 (Grenade, Spain, 01/2005–01/2005)
2005

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