Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Acte de colloque

Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Herve Peyre, Thierry Chassagne, Marcin Zielinski et Sandrine Juillaguet

Material Sciences Forum, Vol.897

Mater. Sci. Forum

11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, Greece, 09/2016)

2017

Résumé

Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

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Titre: Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates
Créateurs - sans rôle: Sylvie Contreras - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Leszek Konczewicz - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Roxana Arvinte
Herve Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Thierry Chassagne - Savoie Technolac
Marcin Zielinski - NOVASiC (France)
Sandrine Juillaguet - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Détails de publication: Material Sciences Forum, Vol.897
Colloque: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, Greece, 09/2016)
Publications en série: Mater. Sci. Forum
Identifiants: 9936793509311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01935564