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Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect
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Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect

Amit Karel, Mariane Comte, Jean-Marc J.-M. Galliere, Florence Azaïs et Michel Renovell
17th IEEE Latin-American Test Symposium, pp.129-134
LATS: Latin-American Test Symposium (Foz do Iguacu, Brazil, 06/03/2016–08/03/2016)
2016

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