Résumé
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly exciting nanotransistors can pave the way for new class of coherent and easily tunable THz sources. (C) 2010 Optical Society of America