Résumé
We study by time resolved photoluminescence (TRPL) low N and In content GaInNAs (GINA) alloy layers grown by molecular beam epitaxy on GaAs substrate. The TRPL experiments show the coexistence and the carrier exchanges between bound- and free-exciton states, in this kind of alloy. Temperature dependent experiments demonstrate the thermal ionization of bound excitons and the high temperature stability of free excitons. For a temperature higher than 60 K the PL spectra are totally dominated by the free exciton line.