Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

Jean-Robert Manouvrier; Pascal Fonteneau; Charles-Alexandre Legrand; Pascal Nouet; Florence Azaïs

doi:10.1109/EOSESD.2007.4401748

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Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet et Florence Azaïs

EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, pp.3A.2_1- 3A.2_10

EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium (Anaheim, CA, USA, 17/09/2007–21/09/2007)

2007

DOI: https://doi.org/10.1109/EOSESD.2007.4401748

Résumé

A measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with and without a guard ring implemented respectively in a 65nm and 130nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.

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Détails

Titre: Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain
Créateurs - sans rôle: Jean-Robert Manouvrier - Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
Pascal Fonteneau - STMicroelectronics (France)
Charles-Alexandre Legrand - STMicroelectronics (France)
Pascal Nouet - Université de Montpellier
Florence Azaïs - Conception et Test de Systèmes MICroélectroniques
Détails de publication: EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, pp.3A.2_1- 3A.2_10
Colloque: EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium (Anaheim, CA, USA, 17/09/2007–21/09/2007)
Identifiants: 9943419509311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-00199232