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Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe: C heterojunction bipolar trasnsistors
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Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe: C heterojunction bipolar trasnsistors

M. Seif, F. Pascal, B. Sagnes et S. Haendler
10th Conference on Ph. D. Research in Microelectronics and Electronics - PRIME 2014 (Grenoble, France, 2014)

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