Résumé
Low frequency noise (LFN) in 0.13 mu m BiCMOS SiGe: C was characterized both as a function of base current bias I-B and emitter area A(e). The LFN exhibits typical behavior of 1/f noise for frequencies up to 1 KHz after which the shot noise 2qI is visible, in transistors with large emitter area (A(e) > 1 mu m(2)). The 1/f noise is modeled following the SPICE compact model, and the LFN parameters K-F and A(F) were calculated. The extracted figure of merit K-B = K-F * A(e), has an excellent value of 1.10(-10) mu m(2). The transistors with small emitter area (A(e) < 1 mu m(2)) can be affected by the presence of generation-recombination (G-R) components. In some cases, where generation-recombination presents large amplitude and high cut-off frequency, it is related to random telegraph signal (RTS).