Cavity based THz photoconductive switch: towards high average power

Jacques Hawecker; K. Maussang; José Palomo; R. Colombelli; I. Sagnes; Juliette Mangeney; Jérôme Tignon; Sukhdeep Dhillon; IEEE

doi:10.1109/IRMMW-THz.2019.8873779

Acte de colloque

Cavity based THz photoconductive switch: towards high average power

Jacques Hawecker, K. Maussang, José Palomo, R. Colombelli, I. Sagnes, Juliette Mangeney, Jérôme Tignon, Sukhdeep Dhillon et IEEE

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Vol.2019-, pp.1-1

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

2019

DOI: https://doi.org/10.1109/IRMMW-THz.2019.8873779

Résumé

Physics

Reaching milliwatt average powers and room temperature operation for THz sources has become the key challenge for the uptake of THz applications that require real-time imaging. This criteria remains extremely challenging. By placing a photoconductive switch within a quasi-resonant cavity, we are able to show average power around 2mW which is an important development towards room temperature THz imaging.

Indicateurs

1 Consultations de la notice

Détails

Titre: Cavity based THz photoconductive switch: towards high average power
Créateurs - sans rôle: Jacques Hawecker - Nano-THz
K. Maussang - Département de Physique de l'ENS-PSL
José Palomo - Laboratoire de Physique de l'Ecole Normale Supérieure
R. Colombelli - Centre de Nanosciences et de Nanotechnologies
I. Sagnes - Centre de Nanosciences et de Nanotechnologies
Juliette Mangeney - Nano-THz
Jérôme Tignon - Nano-THz
Sukhdeep Dhillon - Nano-THz
IEEE
Détails de publication: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Vol.2019-, pp.1-1
Colloque: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Éditeur: IEEE
Nombre de pages: 1
Identifiants: 99139400709311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding