Logo image
Se connecter
Carrier Recombination Processes in 2.3-mu m Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)
Acte de colloque

Carrier Recombination Processes in 2.3-mu m Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)

Aneirin R. Ellis, Igor P. Marko, Timothy D. Eales, Laurent Cerutti, Marta Rio Calvo, Laura Monge Bartolome, Jean-Baptiste Rodriguez, Eric Tournie, Stephen J. Sweeney et IEEE
27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021)
01/01/2021

Résumé

SILICON
Epitaxial growth of III-V lasers on CMOS-compatible Si(001) is a key component in the realisation of photonic integrated circuits. In this work we investigate the mechanisms underpinning the performance of first generation GaSb-based devices grown epitaxially on industry-standard Si.

Indicateurs

1 Consultations de la notice

Détails

Logo image