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CONCEPTION AND FABRICATION OF InAs-BASED HOT ELECTRON TRANSISTOR
Acte de colloque

CONCEPTION AND FABRICATION OF InAs-BASED HOT ELECTRON TRANSISTOR

Thibaut Daoud, Guilhem Boissier, Jan Devenson, Giulio Sabatini, Luca Varani, Alexei Baranov, Roland Teissier et IEEE
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), pp.381-384
CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS
01/01/2008

Résumé

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Optics Physical Sciences Science & Technology Technology
An innovative hot electron transistor based on InAs/AlSb heterostructures is proposed and studied. First fabricated devices demonstrated static current gain of 5 at room temperature. The potential of this device for high frequency operation is also discussed.

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