Atomistic to circuit level modeling of defective doped SWCNTs with contacts for on-chip interconnect application

Jie Liang; Lee Jaehyun; Salim Berrada; Vihar P. Georgiev; Asenov Asen; Nadine Azemard; Aida Todri-Sanial

doi:10.1109/NMDC.2017.8350506

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Atomistic to circuit level modeling of defective doped SWCNTs with contacts for on-chip interconnect application

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Atomistic to circuit level modeling of defective doped SWCNTs with contacts for on-chip interconnect application

Jie Liang, Lee Jaehyun, Salim Berrada, Vihar P. Georgiev, Asenov Asen, Nadine Azemard et Aida Todri-Sanial

12th Nanotechnology Materials and Devices Conference, pp.66-67

NMDC: Nanotechnology Materials and Devices Conference (Singapore, Singapore, 02/10/2017–04/10/2017)

2017

DOI: https://doi.org/10.1109/NMDC.2017.8350506

Résumé

Carbon nanotubes (CNTs) due to their high electrical/thermal conductivity, high ampacity, high tolerance to electro-migration [1] and small dimensions make them an ideal candidate for future on-chip interconnects [2]. Fabricating the CNTs, random chirality and some defects are introduced which can degrade the CNT electrical properties [3]. Additionally, the contact resistance between metal and CNT presents additional parasitics that impose restraints on the electron transport. Electrical models of CNT for interconnect application were developed several years ago [4-5]. In this paper, we explored on doped and defective single-wall CNTs (SWCNT (24,0)) including contact resistance as important physical parameters to assess the performance of fabricated SWCNTs realistically for back-end-of-line (BEOL) on-chip interconnects on VLSI circuit application.

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Détails

Titre: Atomistic to circuit level modeling of defective doped SWCNTs with contacts for on-chip interconnect application
Créateurs - sans rôle: Jie Liang - Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
Lee Jaehyun - University of Glasgow
Salim Berrada - University of Glasgow
Vihar P. Georgiev - University of Glasgow
Asenov Asen - James Watt School of Engineering [Univ Glasgow]
Nadine Azemard - Smart Integrated Electronic Systems
Aida Todri-Sanial - Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
Détails de publication: 12th Nanotechnology Materials and Devices Conference, pp.66-67
Colloque: NMDC: Nanotechnology Materials and Devices Conference (Singapore, Singapore, 02/10/2017–04/10/2017)
Identifiants: 9946325509311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-01880220