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Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data
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Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data

Matthieu Fongral, Vincent Pouget, Frédéric Saigné, Marine Ruffenach, Jérôme Carron, Florence Malou et Julien Mekki
Proceedings of RADECS 2023
European Conference on Radiation and its Effects on Components and Systems (RADECS) (Toulouse, France, 25/09/2023–29/09/2023)

Résumé

The SEL cross-section of a 16nm finFET programmable SoC is investigated by combining SPA laser testing, emission microscopy and embedded instrumentation. Results indicate the origin of latch-ups and present excellent correlation with heavy ion data.

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