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Analysis of THz detection saturation processes in InGaAs-based HEMTs
Acte de colloque

Analysis of THz detection saturation processes in InGaAs-based HEMTs

A. Mahi, C. Palermo, H. Marinchio, A. Belgachi, S. Blin, L. Varani et IEEE
International Conference on Infrared, Millimeter, and Terahertz Waves (Print), Vol.2016-, pp.1-2
09/2016
DOI: https://doi.org/10.1109/IRMMW-THz.2016.7758621

Résumé

Heating HEMTs Logic gates MODFETs Physics Plasmas
By numerical simulations, we investigate the behavior of the current photoresponse of InGaAs high electron mobility transistors (HEMTs) submitted to THz radiations. By increasing the incoming wave power density, the response of the device is shown to saturate, in agreement with experimental results. This limitation of the detection features is shown to be due to electron heating.

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