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Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption
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Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption

El Moukthari Issam, Vincent Pouget, Frédéric Darracq, Camille Larue, Dean Lewis, Philippe Perdu et IEEE
Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems, pp.1-6
Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems
14th European Conference on Radiation and Its Effects on Components and Systems
09/2013

Résumé

Electronics Engineering Sciences Optics Photonic
We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.

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