Analysing the Memory Effect of Resistive Open in CMOS Random Logic

Michel Renovell; Mariane Comte; Ilia Polian; Piet Engelke; Bernd Becker

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Analysing the Memory Effect of Resistive Open in CMOS Random Logic

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Analysing the Memory Effect of Resistive Open in CMOS Random Logic

Michel Renovell, Mariane Comte, Ilia Polian, Piet Engelke et Bernd Becker

Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on, pp.251-256

DTIS: Design and Technology of Integrated Systems in Nanoscale Era (Tunis, Tunisia, 2006)

2006

Résumé

This paper analyzes the electrical behaviour of resistive opens as a function of its unpredictable resistance. It is demonstrated that the electrical behaviour depends on the value of the open resistance. It is also shown that, due to the memory effect detection of the open by a given vector Ti depends on all the vectors that have been applied to the circuit before Ti. An electrical analysis of this memory effect is presented.

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Détails

Titre: Analysing the Memory Effect of Resistive Open in CMOS Random Logic
Créateurs - sans rôle: Michel Renovell - Conception et Test de Systèmes MICroélectroniques
Mariane Comte - Conception et Test de Systèmes MICroélectroniques
Ilia Polian - University of Freiburg
Piet Engelke - University of Freiburg
Bernd Becker - University of Freiburg
Détails de publication: Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on, pp.251-256
Colloque: DTIS: Design and Technology of Integrated Systems in Nanoscale Era (Tunis, Tunisia, 2006)
Identifiants: 9945400009311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-00093383