An SEU Tolerant MRAM based non-volatile asynchronous circuit design

Jeremy Lopes; Gregory Dipendina; Edith Beigné; Lionel Torres

doi:10.1109/RADECS.2016.8093151

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An SEU Tolerant MRAM based non-volatile asynchronous circuit design

Jeremy Lopes, Gregory Dipendina, Edith Beigné et Lionel Torres

16th European Conference on Radiation and Its Effects on Components and Systems

RADECS: Radiation and its Effects on Components and Systems (Bremen, Germany, 19/09/2016–23/09/2016)

19/09/2016

DOI: https://doi.org/10.1109/RADECS.2016.8093151

Résumé

This work proposes a novel SEU tolerant circuit design based on asynchronous communica- tion coupled with magnetic memory, MRAM, and SOI process that can detect and correct single or multiple errors without triplication of the circuit.

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Détails

Titre: An SEU Tolerant MRAM based non-volatile asynchronous circuit design
Créateurs - sans rôle: Jeremy Lopes - Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Gregory Dipendina - Circuits Multi-Projets
Edith Beigné - Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Lionel Torres - Spintronique et Technologie des Composants
Détails de publication: 16th European Conference on Radiation and Its Effects on Components and Systems
Colloque: RADECS: Radiation and its Effects on Components and Systems (Bremen, Germany, 19/09/2016–23/09/2016)
Identifiants: 9945353409311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-01396984