Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis

Victor Malherbe; Gilles Gasiot; Dimitri Soussan; Aurelien Patris; Jean-Luc Autran; Philippe Roche; IEEE

doi:10.1109/IRPS.2015.7112829

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Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis

Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche et IEEE

2015 IEEE International Reliability Physics Symposium, Vol.2015-, pp.SE.11.1-SE.11.6

04/2015

DOI: https://doi.org/10.1109/IRPS.2015.7112829

Résumé

Alpha particles

Logic gates

Monte Carlo methods

MOSFET

Silicon-on-insulator

We report on soft error rate measurements on 28 nm commercial FDSOI SRAM bitcells under alpha irradiation. The technology proves to be experimentally quasi-immune to alpha particles. Simulation results are also presented, through 3D-TCAD investigations of the transport mechanisms followed by Monte-Carlo simulations of the charge deposition.

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Détails

Titre: Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis
Créateurs - sans rôle: Victor Malherbe - STMicroelectron., Crolles, France
Gilles Gasiot - STMicroelectron., Crolles, France
Dimitri Soussan - STMicroelectron., Crolles, France
Aurelien Patris - IM2NP, Aix-Marseille Univ., Marseille, France
Jean-Luc Autran - IM2NP, Aix-Marseille Univ., Marseille, France
Philippe Roche - STMicroelectron., Crolles, France
IEEE
Détails de publication: 2015 IEEE International Reliability Physics Symposium, Vol.2015-, pp.SE.11.1-SE.11.6
Éditeur: IEEE
Identifiants: 99162868509311
Unité académique: Institut Montpelliérain Alexander Grothendieck - IMAG
Langue: English
Type de ressource: Conference proceeding