We present the growth and characterization of epitaxial Graphene on the (000-1) and (11-20) planes. In both cases, the growth was carried out in a RF furnace, by implementing our technique of confined atmosphere, covering the SiC substrate with a graphitic cap during the growth. The grown material was investigated by means of AFM, SEM, Raman spectroscopy and magneto transport. Contrary to the (0001) face, in both faces (000-1) and (11-20), almost free standing Graphene monolayers of very high quality are grown. These Graphene sheet are uniform, continuous, almost strain-free and lightly doped. In both faces, Hall bars were fabricated and Shubnikov-de Haas oscillations typical of Graphene, as well as the Half Integer Quantum Hall Effect are observed.
- Almost free standing Graphene on SiC(000-1) and SiC(11-20)
- Bilal Jabakhanji - Université de Montpellier, Laboratoire Charles Coulomb - L2CNicolas Camara - Centro Nacional de MicroelectrónicaAlessandra Caboni - Universitat Autònoma de BarcelonaChristophe Consejo - Université de Montpellier, Laboratoire Charles Coulomb - L2CBenoit Jouault - Université de Montpellier, Laboratoire Charles Coulomb - L2CPhilippe Godignon - Centro Nacional de MicroelectrónicaJean Camassel - Université de Montpellier, Laboratoire Charles Coulomb - L2C
- Alquier, D
- HETEROSIC & WASMPE 2011 (KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland, 2011)
- Materials Science Forum
- 9936128809311
- Laboratoire Charles Coulomb - L2C
- English
- Conference proceeding
- hal-03037523