Résumé
We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next generation back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical conductance up to 90% by converting semiconducting shells to metallic. Circuit-level simulations predict up to 88% signal delay improvement with doped vs. pristine CNT. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction which is a milestone result for future CNT interconnect technology.