A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences

L. Dusseau; J. Mekki; M. Fahrer; M. Moll; M. Glaser

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A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences

L. Dusseau, J. Mekki, M. Fahrer, M. Moll et M. Glaser

European Conference on Radiation and Its Effects on Components and Systems, Vol.57(4 (1)), pp.2066-2073

European Conference on Radiation and Its Effects on Components and Systems (Bruges, Belgium, 14/09/2009–14/09/2009)

2010

Résumé

radiation damage

accelerators

particle beams

radiation monitoring

Index Terms—p-i-n diodes

—In this work the effect of radiation damage on Silicon p-in diodes has been studied. I–V characteristics of unirradiated and irradiated diodes up to 6.3×10 15 n eq /cm 2 have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation. 1

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Détails

Titre: A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences
Créateurs - sans rôle: L. Dusseau - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
J. Mekki - European Organization for Nuclear Research
M. Fahrer - European Organization for Nuclear Research
M. Moll - European Organization for Nuclear Research
M. Glaser - European Organization for Nuclear Research
Détails de publication: European Conference on Radiation and Its Effects on Components and Systems, Vol.57(4 (1)), pp.2066-2073
Colloque: European Conference on Radiation and Its Effects on Components and Systems (Bruges, Belgium, 14/09/2009–14/09/2009)
Identifiants: 9943858309311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01631668