A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm

A. Pérona; Y. Rouillard; A. Salhi; P. Grech; F. Chevrier; A. Yarekha; A. Garnache; A. N. Baranov; C. Alibert

doi:10.1109/ICIPRM.2002.1014630

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A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm

A. Pérona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, A. Yarekha, A. Garnache, A. N. Baranov et C. Alibert

14th Indium Phosphide and Related Materials Conference (IPRM) (Stockholm, Sweden, 12/05/2002–16/05/2002)

2002

DOI: https://doi.org/10.1109/ICIPRM.2002.1014630

Résumé

We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm/sup -1/ have been found. The system is able to reach threshold current densities as low as 63 A/cm/sup 2/ per well for a cavity length of 1200 /spl mu/m. This is, to our knowledge, the best reported value at 2.26 /spl mu/m.

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Titre: A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm
Créateurs - sans rôle: A. Pérona - Université de Montpellier
Y. Rouillard - Centre National de la Recherche Scientifique
A. Salhi - Centre National de la Recherche Scientifique
P. Grech - Centre National de la Recherche Scientifique
F. Chevrier - Centre National de la Recherche Scientifique
A. Yarekha - Centre d'Electronique et de Micro-optoélectronique de Montpellier
A. Garnache - Centre National de la Recherche Scientifique
A. N. Baranov - Centre d'Electronique et de Micro-optoélectronique de Montpellier
C. Alibert - Université de Montpellier
Colloque: 14th Indium Phosphide and Related Materials Conference (IPRM) (Stockholm, Sweden, 12/05/2002–16/05/2002)
Identifiants: 9942308509311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01793934