Résumé
With technology scaling down, the vulnerability of circuits to radiation and the increase of static power have become severe concerns. Spintronic devices such as magnetic tunnel junction (MTJ) have been developed to cope with many concerns, among which reliability concerns [1]. Spintronic devices have attractive properties, such as non-volatility and compatibility with conventional CMOS fabrication process. Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magnetic latch, namely M-TPDICE, that can completely tolerate single-node upsets (SNUs) and double-node upsets (DNUs). Simulations of the proposed latch with the HSPICE tool with a 45 nm CMOS technology model have demonstrated the effectiveness of the proposed latch.