Résumé
In this paper, we propose a novel framework for the sensitivity evaluation of the SRAM core-cell to neutron radiation through extensive SPICE simulations. We have applied this method on a 40nm technology core-cell. The first step of this methodology is the generation of a large realistic population of neutrons colliding the device under test. From these particle impacts, the resulting parasitic currents are next calculated. Then, these currents are used in SPICE simulations over the SRAM core-cell to evaluate the variance of its Soft Error Rate (SER) under different operating modes (static, dynamic), supply voltage and process corner.