Résumé
This paper describes the integration of a thermally assisted switching magnetic random access memory (TAS-MRAM) in FPGA design. The non-volatility of the latter is achieved through the use of magnetic tunneling junctions (MTJ) in the MRAM cell. A thermally assisted switching scheme is used to write data in the MTJ device, which helps to reduce power consumption during write operation in comparison to the writing scheme in classical MTJ device. Plus, the non-volatility of such a design should reduce both power consumption and configuration time required at each power up of the circuit in comparison to classical SRAM based FPGAs. A real time reconfigurable (RTR) micro-FPGA using TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.