Résumé
The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency is related to the layout of contact electrodes that play a role of an antenna. Our results show that the antenna coupling efficiency is one of the most important parameter to optimize in future field effect transistor based terahertz detectors.