A 300 GHz data communication receiver using plasma-wave FET detector in 65nm CMOS

Kefei Wu; Marwah Shafee; Philippe Le Bars; Walaa Sahyoun; Stéphane Blin; Guillaume Ducournau; Wojciech Knap; Mona Mostafa Hella

doi:10.1109/RWS45077.2020.9050055

Conference proceeding

A 300 GHz data communication receiver using plasma-wave FET detector in 65nm CMOS

Kefei Wu, Marwah Shafee, Philippe Le Bars, Walaa Sahyoun, Stéphane Blin, Guillaume Ducournau, Wojciech Knap and Mona Mostafa Hella

Proceedings of IEEE Radio and Wireless Symposium, RWS 2020, (ISBN 978-1-7281-1121-6 ; e-ISBN 978-1-7281-1120-9), pp.72-75

Proceedings of IEEE Radio and Wireless Symposium, RWS 2020

2020 IEEE Radio and Wireless Symposium (RWS) (San Antonio, United States, 26/01/2020–29/01/2020)

01/2020

DOI: https://doi.org/10.1109/RWS45077.2020.9050055

Abstract

This paper presents a fully integrated receiver for 300 GHz communication using plasma-wave field effect transistor (FET) detector in digital 65 nm CMOS technology (fT/fmax=170/230 GHz). Besides the detector, the receiver chain includes an on chip patch antenna and a broadband base-band amplifier. The low modulation frequency charac-terization shows a responsivity around 3 V/W at 290 GHz with a bandwidth around 20 GHz (280 ~ 300 GHz). Using a PRBS signal source, the highest measured detectable data rate is 1 Gb/s at 300 GHz carrier frequency, which shows the capability of data communication using the single FET plasma wave detector. The measured data rate is limited by the output power generated from the modulated signal source as well as the noise collected over the bandwidth of the amplifier. To the authors' best knowledge, this is the first demonstration of successful communication in CMOS with integrated antenna, single plasma wave FET detector and broadband amplifier in sub-millimeter/terahertz wave frequencies.

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Title: A 300 GHz data communication receiver using plasma-wave FET detector in 65nm CMOS
Creators - without role: Kefei Wu - Rensselaer Polytechnic Institute
Marwah Shafee - EngNet Inc.
Philippe Le Bars - TDF
Walaa Sahyoun - Institut de Microélectronique, Electromagnétisme et Photonique
Stéphane Blin - Institut d'Électronique et des Systèmes
Guillaume Ducournau - École Centrale de Lille
Wojciech Knap - Groupe d'étude des semiconducteurs
Mona Mostafa Hella - Rensselaer Polytechnic Institute
Publication Details: Proceedings of IEEE Radio and Wireless Symposium, RWS 2020, (ISBN 978-1-7281-1121-6 ; e-ISBN 978-1-7281-1120-9), pp.72-75
Conference: 2020 IEEE Radio and Wireless Symposium (RWS) (San Antonio, United States, 26/01/2020–29/01/2020)
Series: Proceedings of IEEE Radio and Wireless Symposium, RWS 2020
Grant note: The work was partially supported by the ’International Research Agendas’ CENTERA- MAB/2018/9 and TEAM/2016-3/25 projects of the Foundation for Polish Science.
Identifiers: 9938883509311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Conference proceeding
Local Fields: hal-02529654