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A 2.4 ns and 51 Fj/bit Sense Amplifier for Deep-Submicrometer Resistive Memories
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A 2.4 ns and 51 Fj/bit Sense Amplifier for Deep-Submicrometer Resistive Memories

Thomas Falanga, Jad Mohdad, Frederick Mailly, Pascal Nouet et IEEE
Proceedings of the ... IEEE International Conference on Electronics, Circuits, and Systems (Online), pp.1-4
18/11/2024

Résumé

Electronic circuits Energy consumption NonVolatile Memories (NVM) Nonvolatile memory offset voltage cancellation Power demand Recycling resistive memories Scalability sense amplifier (SA) Sensors Spin-Transfer Torque MRAM (STT-MRAM) Torque Voltage

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1 Consultations de la notice

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