720 mW continuous wave room temperature operation diode laser emitting at around 2.4 m

Michel Garcia; Yves Rouillard; Eric Tournié; Michel Krakowski

doi:10.1117/12.630661

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Acte de colloque

720 mW continuous wave room temperature operation diode laser emitting at around 2.4 m

Michel Garcia, Yves Rouillard, Eric Tournié et Michel Krakowski

Proceedings of SPIE, Vol.5989(1), pp.598908-598909

Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II

13/10/2005

DOI: https://doi.org/10.1117/12.630661

Résumé

Specific developments on technological steps involved in the fabrication of antimony based diode lasers have been carried out. Evident improvements of the performances have been achieved. High power, low threshold, room temperature (RT) and continuous wave (CW) operation laser diodes emitting around 2.4 m, based on the InGaAsSb / AlGaAsSb materials system, have been realised. with a 100 m wide and 1mm long cavity laser, a maximum output power of 720mW has been obtained at 285K.

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Détails

Titre: 720 mW continuous wave room temperature operation diode laser emitting at around 2.4 m
Créateurs - sans rôle: Michel Garcia - Alcatel Thales III (France)
Yves Rouillard - Univ. of Montpellier II (France)
Eric Tournié - Univ. of Montpellier II (France)
Michel Krakowski - Alcatel-Lucent
Détails de publication: Proceedings of SPIE, Vol.5989(1), pp.598908-598909
Colloque: Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II
Identifiants: 99139295709311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding