6H-type zigzag faults in low-doped 4H-SiC expitaxial layers

Teddy Robert; M. Marinova; Sandrine Juillaguet; A. Henry; E. K. Polychroniadis; Jean Camassel

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6H-type zigzag faults in low-doped 4H-SiC expitaxial layers

Teddy Robert, M. Marinova, Sandrine Juillaguet, A. Henry, E. K. Polychroniadis et Jean Camassel

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol.645-648, pp.347-350

13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), France, 11/10/2009)

2010

Résumé

silicon carbide

stacking faults

low temperature photoluminescence

high resolution transmission electron microscopy

quantum well

STACKING-FAULTS

EPITAXIAL-GROWTH

A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 41-1-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.

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Détails

Titre: 6H-type zigzag faults in low-doped 4H-SiC expitaxial layers
Créateurs - sans rôle: Teddy Robert - Groupe d'étude des semiconducteurs
M. Marinova
Sandrine Juillaguet - Groupe d'étude des semiconducteurs
A. Henry
E. K. Polychroniadis
Jean Camassel - Groupe d'étude des semiconducteurs
Détails de publication: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol.645-648, pp.347-350
Colloque: 13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), France, 11/10/2009)
Identifiants: 9943279109311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00543650