4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes; Antonis Stavrinidis; George Konstantinidis; Maria Kayambaki; Konstantinos Vamvoukakis; Emmanouil Vassakis; Konstantin Vassilevski; Alton Horsfall; Nick Wright; Pierre Brosselard; Shiqin Niu; Mihai Lazar; Dominique Planson; Dominique Tournier; Nicolas Camara

Acte de colloque

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, Emmanouil Vassakis, Konstantin Vassilevski, Alton Horsfall, Nick Wright, Pierre Brosselard, …

Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials, pp.WE-P-75

ECSCRM'14

06/2015

Résumé

Electric power

Engineering Sciences

Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm) and its width (1.5-5μm). The transistors exhibited high current handling capabilities (Direct Current density 330A/cm2). The output current reduces with the increase of the measurements temperature due to the decrease of the electron mobility value. The voltage breakdown exhibits a triode shape, which is typical for a static-induction transistor operation.

Indicateurs

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Détails

Titre: 4H-SiC VJFETs with Self-Aligned Contacts
Créateurs - sans rôle: Konstantinos Zekentes - Institute of Electronic Structure and Laser
Antonis Stavrinidis - Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece
George Konstantinidis - Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece
Maria Kayambaki - FORTH Institute of Electronic Structure and Laser
Konstantinos Vamvoukakis - Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece
Emmanouil Vassakis
Konstantin Vassilevski - Newcastle University [Newcastle]
Alton Horsfall - School of Electrical and Electronic Engineering [Newcastle]
Nick Wright - School of Electrical and Electronic Engineering [Newcastle]
Pierre Brosselard - Ampère, Département Energie Electrique
Shiqin Niu - Ampère, Département Energie Electrique
Mihai Lazar - Ampère, Département Energie Electrique
Dominique Planson - Ampère, Département Energie Electrique
Dominique Tournier - Ampère, Département Energie Electrique
Nicolas Camara - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
Détails de publication: Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials, pp.WE-P-75
Colloque: ECSCRM'14
Identifiants: 99162637409311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding